Stefan Mileschin

SK Hynix announced on Monday that it has completed development of its first monolithic 16 Gb chip. This chip is to be made using its 3rd Generation 10 nm-class process technology. The new memory devices will enable the company and its partners to make more energy-efficient and higher capacity DIMMs, such as 32 GB unbuffered modules for consumers or higher capacity buffered modules for enterprise consumption.

SK Hynix’s 16 Gb chip made using the company’s 3rd Generation 10 nm-class manufacturing technology (also known as '1Z' nm) and is rated for DDR4-3200 data transfer rates. The company states that these chips have a reduced power consumption by 40% when compared to modules of the same capacity based on 8 Gb DRAMs produced using the company’s 2nd Generation 10 nm-class (aka 1Ynm) process.

https://www.anandtech.com/show/15012...gen-ddr4-chips