Stefan Mileschin

For server and enterprise

During the Hot Chips conference, Samsung's memory division has given a bit more details about the upcoming DDR5 memory, showing a 512GB DDR5 module running at DDR5-7200.

In its presentation, Samsung was keen to show advances in performance, bandwidth, capacity, and voltage that are seen across generations. The detailed DDR5-7200 512GB module is running at 1.1V, which follows JEDEC standard (for DDR5-6400 at least), but we still do not have details for DDR5-7200 at JEDEC.

Samsung has also introduced several new technologies that are meant to improve memory performance, capacity, efficiency, reliability, and stability, like the Same-Bank refresh (SBR), Decision Feedback Equalizer (DFE), and more.

In order to bring higher capacity modules, like the showcased 512GB one, Samsung is stacking up to 8 DDR5 dies together, making it even thinner than previously available DDR4 TSV. Samsung has managed to reduce the gap between dies by around 40 percent by using error-free TSV interconnect technology and thin wafer handling techniques, as well as provide better cooling capability with lower airflow impedance.

https://fudzilla.com/news/pc-hardwar...5-7200-modules